Plasma FIB and failure analysis in semiconductors

Visualization of doped active regions in semiconductor devices
The described approach provides an effective and reliable solution for the visualization of oxide and diffusion layers in terms of accuracy, speed, repeatability and risk of sample damage. Plasma FIB enables site-specific inspection with the possibility of precise navigation to a specific region of interest.

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Visualization of doped active regions in semiconductor devices
The possibility of consistent and efficient inspection throughout the entire manufacturing process of semiconductor devices is one of the key attributes for high yields and profitability. Feedback on control of each manufacturing step is absolutely necessary, especially during the mass production of wafers (tens of millions of devices per week). Checking layer thicknesses, step coverage, geometry of critical details, depth of trenches, etc. is carried out in order to find defects, their origin and implement appropriate corrective measures.
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