XEIA3

Extraordinary ultra-high resolution imaging and extreme micromachining power in one single instrument. Whether your applications demand extremely powerful and ultra-fast micro-/nano- FIB machining, an ultimate uncompromised ultra-high resolution (UHR) at low beam energies, ultra-fast and reliable microanalysis or 3D analytical reconstructions, XEIA3 stands out as the ideal turnkey FIB-SEM system that offers all these capabilities in one single and unique instrument with outstanding performance. With the new XEIA3, TESCAN not only delivers an instrument top of its class but also fulfils its commitment to continue helping researchers push science and development forward. This is also reflected in the careful customisation of every system in order to meet the specific needs of every customer. From materials to life sciences or from engineering to the semiconductor industry, TESCAN guarantees high-per-formance systems without any compromises.

Key features

Triglav™ - newly designed UHR electron column

  • TriLens™ objective system: unique combination of three-lens objective and crossover-free beam path
  • Advanced detection system with multiple SE and BSE detectors
  • Triglav™ - Ultimate ultra-high resolution at low beam energy: 1 nm at 1 keV and 0.7 nm at 15 keV
  • EquiPower™ thermal power dissipation system for excellent electron column stability
  • Electron beam currents up to 400 nA and rapid beam energy changes
  • Optimised column geometry for accommodating large wafers up to 8”

Extremely powerful Xe plasma FIB column

ECR-generated Xe plasma ion source FIB column for achieving the most challenging large-scale milling tasks in unbeatable short times frames
  • 50x faster than Ga LMIS FIBs.
  • Ion beam range current of 1 pA to 2 µA and resolution of < 25 nm
  • Newly developed high resolution Xe plasma FIB column (Optional) achieving resolution of < 15 nm for extended patterning capabilities
  • Large-mass xenon ions with larger FIB current range for ultra-fast sputtering even with­out gas-assisted enhancement
  • Significant reduction in ion implantation compared to Ga LMIS FIBs
  • Xe noble gas atoms do not alter electrical properties in the vicinity of the patterned area
  • No intermetallic compounds formed during FIB milling
XEIA3
XEIA3

Product Brochure

XEIA3 brochure
Extraordinary ultra-high resolution imaging and extremely fast micromachining. Download XEIA3 brochure!
pdf – 2.5 MB

Semiconductors & Microelectronics

Materials Science

Life Science