Advanced failure analysis and fault isolation in FinFET-based devices with the new TESCAN S8000X plasma FIB-SEM

Nov/30/2018
Delayering sub-20 nm nodes for in-situ nanoprobing with TESCAN S8000X
The usual workflow for physical failure analysis involves delayering with chip deprocessing and defect isolation using electrical characterisation such as nanoprobing and conductive AFM, followed by defect characterisation through visualisation and material analysis in TEM. The TESCAN S8000X is the platform of choice for deprocessing sub-20 nm nodes essential in FEoL developing workflow processes in modern semiconductor fabs and foundries.

Would you like to know more information? Download our Application Example.



Application Example

Delayering sub-20 nm nodes for in-situ nanoprobing with TESCAN S8000X
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