Non-destructive Failure Analysis in Semiconductors

Jan/10/2019
Quantification of TSV misalignments with high resolution micro-CT – TESCAN UniTOM
Micro bumps and Through-Silica Via (TSV) pitches enable high-density connections between two or more stacks of microchips. Those vertical connections that pass completely through a silicon die are essential components in electronic engineering. By using high-resolution X-ray CT, the complete 3D structure of the microchip can be visualized and measured. Stacking orientation, bounding features and misalignments can be quantified with a spatial resolution of 500 nm.

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Quantification of TSV misalignments with high resolution micro-CT
Quantification of TSV misalignments with high resolution micro-CT


Application Example

Quantification of TSV misalignments with high resolution micro-CT – TESCAN UniTOM