TEM sample preparation and in-situ EDS mapping for failure analysis of semiconductor devices with the new TESCAN S9000X Xe plasma FIB-SEM

Sep/04/2018
TEM specimen prepared from a 66 nm SDRAM sample using the TESCAN S9000X Xe plasma FIB-SEM
Dynamic random-access memory (DRAM) is one of the basic units used in most of the electronic devices including laptops, smartphones, personal computers etc. FIB-preparation of thin TEM specimens from these semiconductor devices is an essential step in the physical failure analysis workflow processes that are implemented on daily basis in semiconductor fabs. The new TESCAN S9000X Xe plasma FIB-SEM make it possible to prepare thin and high-quality TEM specimens. The advantage is that using Xe plasma FIB results in less amorphous lateral damage on lamellae which is beneficial for subsequent specimen TEM analysis.

Download the new TESCAN Application Example and find out more information.

STEM-BF image in which 5 nm-thick layers are well-resolved.
STEM-BF image in which 5 nm-thick layers are well-resolved.

Application Example

TEM specimen prepared from a 66 nm SDRAM sample using the TESCAN S9000X Xe plasma FIB-SEM
Dynamic random-access memory (DRAM) is one of the basic units used in most of the electronic devices including laptops, smartphones, personal computers etc. The crucial elements of such devices are capacitors and transistors. The FET transistor creates an access (based on gate contact signal) to the capacitor unit which is charged and hence the bit information is stored. The charge on the capacitor drains slowly, therefore, the information needs to be refreshed periodically, reason of which, this memory is called dynamic.
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