TESCAN S9000X

Ultimate resolution and maximum throughput in large-scale sample preparation and characterization
 
The TESCAN S9000X is the platform for the most challenging physical failure analysis applications in semiconductors and material characterization that require ultimate precision and extremely high-throughput. The TESCAN S9000X guarantees ultimate resolution and surface sensitivity essential to resolve nanosized structures while providing best conditions for large-volume 3D sample characterizations. At the same time, it delivers unmatched FIB capabilities that enable precise, damage-free, and extremely large-area cross-sectioning in packaging technologies and optoelectronic devices. 

Root-cause physical failure analysis of today’s semiconductors devices has become an extremely complex task that needs to deal with ever smaller devices with higher density and functionality. This requires of highly-reliable analytical platforms that can keep up with the increasing complexity of design and architectures of integrated circuits, optoelectronic devices and in general, with the development of new nanotechnologies and nanomaterials. The TESCAN S9000X is a powerful FIB-SEM platform specifically designed to take up such challenges. The ultimate resolution, surface sensitivity and outstanding contrast is delivered by next generation Triglav™ imaging capabilities. On the other hand, the new iFIB+™ column comes to push even further the realm of applications of Xe plasma FIB and the capability for large-scale sample microengineering and 3D microanalysis while maintaining shortest time frame.

Key Features

  • New Essence SW GUI for easier, faster, and smoother operations, including collision model and customisable, application-oriented layout
  • Next generation Triglav™ UHR SEM column for ultimate resolution and superb performance at low beam energies and optimized In-Beam detection system
  • Energy-filtering axial electron signal collection capability for enhanced surface sensibility
  • New iFIB+™ Xe plasma FIB column with unmatched FoV enabling extremely large-area cross-sectioning
  • New generation of SEM In-lens detection combined with high sputtering rates for ultra-fast 3D microanalysis
  • Proprietary gas chemistry and recipes for physical failure analysis of packaging technologies and IC planar deprocessing
  • Precise piezo-driven beam aperture changer for fast switching between FIB pre-sets
  • Strip with 30 FIB apertures for extended lifetime and minimum maintenance
  • Semi-automated spot-optimising wizard for easy selection of FIB milling conditions
  • Dedicated workflow-oriented SW modules, wizards, and recipes for maximum throughput and ease

Benefits

  • Extremely high-throughput for challenging large-scale milling tasks
    The new iFIB+™ Xe plasma FIB column can generate high FIB currents of up to 2 µA with while maintaining beam spot quality that enables overall times for completing milling tasks are dramatically decreased.
  • New iFIB+™ Xe plasma FIB column with unmatched FoV enabling extremely large-area cross-sectioning
    The new iFIB+ column has the largest-in-class field of view (FoV) in the market of plasma FIB-SEM. With a maximum field of view of more than 1 mm at 30 keV and ultra-high sputtering rates of Xe ions at high currents, 1 mm-wide cross-sections in electronic packaging technologies, and other large structures such as MEMS and displays, can be completed in matter of a few hours. This is a proven solution to simplify complex physical failure analysis workflows.
  • Versatility that extends your possibilities in FIB analysis and microengineering
    The new iFIB+™ Xe plasma FIB offers a large ion beam current range enabling a wide range of applications in one single machine: large currents enable fast milling rates for large-volume bulk material removal, medium currents for large-volume FIB-tomography, low currents for TEM lamella polishing and delayering, and ultra-low currents for damage-free polishing and nanopatterning.
  • Making the most of electron and ion beam capabilities
    A fast, efficient and high-performance gas injection system (GIS) is essential for all FIB applications. The new OptiGIS™ has all these qualities and the S9000X can be equipped with up to 6 units of OptiGIS or optionally with an in-line multi-nozzle 5-GIS system. In addition, different proprietary gas chemistries and proven recipes for physical failure analysis of packaging technologies are available.
  • Maximum precision and optimal FIB performance with ease
    The new iFIB+ column is fitted with an ultra-stable HV supply and precise piezo-driven beam aperture changer which allow fast switching between FIB presets. In addition, a semi-automated spot-optimizing wizard allows users to easy select the best beam spot that optimizes FIB milling conditions for the particular application.
  • Minimal surface damage and Ga-free sample preparation to preserved properties of samples
    Ion implantation range and interaction volume of Xe ions is significantly smaller compared to those of Ga ions. This results in less amorphous damage which is particularly important when preparing thin TEM specimens. In addition, the inert nature of Xe ions prevents the formation of intermetallic compounds with atoms of the milled sample that can result in changes in physical properties of the specimen and interfere with for instance, electrical measurements.


 
  • Robust detection system
    Multi-detector system consisting of TriSE™ and TriBE™ enables collection of SE and BSE in the entire take-off angle range for maximum information of the sample.

     
  • Improved and extended imaging capabilities and meaningful contrast
    The in-beam detection system in the next generation Triglav™ column has been optimized resulting in more than three-fold enhancement of signal detection efficiency. In addition, the detection capabilities have been extended and energy-filtered axial BSEs signal collection is now possible. This makes it possible to enhance surface sensitivity by selectively collecting low-energy axial BSEs and experiment with different contrasts.
  • Ultra-fast 3D microanalysis
    The new and enhanced in-lens detection system enables fast image acquisition, which in combination with high sputtering rates enabled by the Xe plasma FIB, results in ultra-fast data acquisition for 3D microanalysis. EDS and EBSD data can be simultaneously obtained during the FIB-SEM tomography, and post-processed with dedicated software, to obtain 3D reconstructions for unique microstructural, compositional and crystallographic information of whole solder balls, TSVs, metal alloys, etc.
  • Best conditions for microanalysis guaranteed
    The new generation of Triglav™ also comes with adaptive spot shape optimization which, results in improved resolution at high electron beam currents. This feature is beneficial for fast analytical techniques such as EDS, WDS, and EBSD.
  • Enhancement of detection limits in TOF-SIMS analysis and no interference in the elemental spectrum (as opposed to Ga FIBs in which Ga+ peaks can interfere with the detection of other elements such as Ce, Ge and Ga itself).
  • Fast microanalysis without sacrificing spatial resolution 
    The Triglav™ SEM column features a new Schottky FE gun that enables beam currents up to 400 nA and rapid beam energy changes. The In-Flight Beam Tracing™ is a continual aperture optimization that guarantee best conditions for microanalysis.
  • Large wafer analysis
    Thanks to optimal 60° objective geometry design, and a large chamber, SEM and FIB analysis of 6” and 8” wafers at any location is possible.
  • Complex applications easier than ever
    The new TESCAN Essence™ software platform is a simplified, multi-user user interface with a layout manager that enables fast and easy access to main functions. This user-friendly interface can be customized to best fit particular application based on user skill level and preference. A wide range of SW modules, wizards and recipes, make the FIB-SEM applications easy and smooth experiences for both novice and expert users thus boosting productivity and contributing to increase throughput in the lab. The new TESCAN Essence™ also offers the Advanced DrawBeam™ vector-based scanning generator for fast and precise FIB machining and Electron Beam Lithography. 

     
TESCAN S9000X
TESCAN S9000X

Product brochure

TESCAN S9000X brochure
pdf – 3.3 MB

Application Example

FIB-SEM tomography of SiAlON graphene composite using the TESCAN S9000X
SiAlON ceramics are known for their superior mechanical properties, thermal stability, creep resistance and corrosion resistance. Such properties make these ceramics suitable for a variety of applications; for instance, in production of cutting tools or ball bearings where outstanding thermal stability and conductivity are essential wanted features. However, thermal conductivity of SiAlON ceramics could be further improved. On way of enhancing thermal conductivity in SiAlON ceramics is using graphene. The thermal conductivity of the SiAlON-Graphene composite is beneficial especially in the work zone of the material. Beside of thermal properties, graphene additive could also improve electrical conductivity of normally non-conductive SiAlON ceramics. It is then important to properly characterise these compounds in order to control and obtain the desired properties.
pdf – 952 kB

Application Example

Extra-large-area cross-section in an OLED display using the new TESCAN S9000X
Organic Light Emitting Diodes (OLEDs) is a flat light emitting technology, consisting of a series of organic thin films placed between two conductors. When an electrical current is applied, a bright light is emitted. OLEDs are emissive display that do not require a backlight, and as a result, are thinner and more efficient than LCD displays (which do require a white backlight). Other advantage of OLED displays is that they are flexible. For this reason, OLED technology has recently gained significant presence in today’s display market. OLED displays are nowadays produced in mass for mobile phones, tablets, TVs, and wearables.
pdf – 497 kB

Application Example

TEM specimen prepared from a 66 nm SDRAM sample using the TESCAN S9000X Xe plasma FIB-SEM
Dynamic random-access memory (DRAM) is one of the basic units used in most of the electronic devices including laptops, smartphones, personal computers etc. The crucial elements of such devices are capacitors and transistors. The FET transistor creates an access (based on gate contact signal) to the capacitor unit which is charged and hence the bit information is stored. The charge on the capacitor drains slowly, therefore, the information needs to be refreshed periodically, reason of which, this memory is called dynamic.
pdf – 2 MB

TESCAN S9000X microscope

Applications in Semiconductors and Materials Science