Nanowires are of great interest because of their promising electronic and optical properties, which make it possible to manipulate light. Of special interest are nanowires based on group-III nitrides such as GaN since they are semiconductor materials with a wide band gap. The TESCAN S8000 offers excellent imaging capabilities and excellent performance at low electron beam energies essential to resolve morphological features of nano-sized structures. In particular, the TESCAN S8000 can help reveal surface morphologies of grown structures and provide plan views of GaN nanowires and quantum wells grown on the facets of nanowires.
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