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Routine Ga FIB TEM sample preparation of a 14nm FinFET device

Check out this new application example on ultra-thin TEM specimen from a cutting-edge semiconductor device

Routine Ga FIB TEM sample preparation of a 14nm FinFET device

In this application note, ultra-thin lamella preparation from the SRAM array of a commercial processor based on 14 nm technology node is shown.

21.03.2017
  • Routine Ga FIB TEM sample preparation of a 14nm FinFET device

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