TEM sample preparation and in-situ EDS mapping for failure analysis of semiconductor devices with the new TESCAN S9000X Xe plasma FIB-SEM

Dynamic random-access memory (DRAM) is one of the basic units used in most of the electronic devices including laptops, smartphones, personal computers etc. FIB-preparation of thin TEM specimens from these semiconductor devices is an essential step in the physical failure analysis workflow processes that are implemented on daily basis in semiconductor fabs. The new TESCAN S9000X Xe plasma FIB-SEM make it possible to prepare thin and high-quality TEM specimens. The advantage is that using Xe plasma FIB results in less amorphous lateral damage on lamellae which is beneficial for subsequent specimen TEM analysis.

Download the new TESCAN Application Example and find out more information.