The formal presentation of the new column technology is taking place at the Microscopy & Microanalysis conference in Columbus, Ohio, USA where the new XEIA3 and GAIA3 – models 2016 fitted with the Triglav™ column will be available for the live demos.
“We have completely redesigned our UHR column improving the resolution by 30%, achieving sub-nanometre resolution of 0.7 nm at 15 keV and an impressive 1 nm at 1 keV. In addition, the analytical potential has been significantly improved resulting in an excellent performance in the field-free mode,” said Jaroslav Jiruše, the head of R&D Physics in TESCAN. “Triglav™ column is based on the three objective lenses whose combination results in different imaging modes. The column is equipped with a universal detection system consisting of multiple SE and angle-selective BSE detectors for maximum surface and compositional contrast. Furthermore, the geometry of the column has also been redesigned allowing larger samples to be analyzed; this is particularly relevant to the semiconductor industry as large wafers can be accommodated for their analysis,” added Jiruše.
UHR imaging is an essential capability for the semiconductor industry and is critical in performing routine root failure analysis in state-of-the-art technology nodes and multi-layered optical devices, or, defect characterization on wafers at known locations. In materials science, the characterization of nanowires and nanotubes is a challenging task that requires UHR in order to resolve the features of interest in such materials. UHR allows researchers to examine the detail of the ultrastructures of cell and tissue biology. While the outstanding imaging capabilities of the Triglav™ column excel in the entire range of accelerating voltages, it is the ultimate resolution and performance at low beam energies that makes this column ideal for imaging nonconductive and beam-sensitive samples.
The new UHR column technology is now an integral part of the TESCAN UHR family systems – model 2016: MAIA3 a UHR SEM, and, GAIA3 and XEIA3 both FIB-SEM systems equipped with Ga and Xe plasma ion source FIB column respectively.